Fall 2009
Class is Monday, Wednesday, Friday 9:00-9:50 in Roberts 218.
Labs meet on Tuesdays, 12:10-2:00, 2:10-4:00 and 4:10-6:00 in Cobleigh 621.
The professor this term is David Dickensheets, davidd@ee.montana.edu, (406) 994-7874, 530 Cobleigh Hall.
David's Office Hours are MW 3:30-5:00, Tu. 9:30-10:30, F 1:30-3:00.
The TA this term is Ningkonsin Rajkumar, ningkon@gmail.com , cell# (408) 204-2810, 528 Cobleigh Hall.
Ningkonsin's Office Hours are W 3-5, F 3-4
The grader this term is Adel Nehmeh, adel.nehmeh@msu.montana.edu, 994-5975, 638 Cobleigh Hall
Adel is often available MWF 12:30-1:00, but emailing for an appointment is the best way to arrange a time to meet with him..
To be completed prior to lecture on the indicated dates
|
Lecture
Date |
Reading
Assignment |
Lecture
Topic |
|
8/31 |
Intro
to course; Thevenin/Norton review |
|
|
9/2 |
Sedra
sections 1.1-1.6; 3.1 |
Amplifier
models; diode intro; ideal diode |
|
9/4 |
Sedra
section 3.2 |
Ideal
diode circuit examples; p-n junction characteristics |
|
9/9 |
Sedra
section 3.3 |
Large
signal diode model; rectifier example |
|
9/11 |
Sedra
section 3.3, (3.4, 3.5) |
Small
signal diode model; diode switch example; diode attenuator example |
|
9/14 |
Sedra
section 3.4, 3.5, 3.6 |
Zener
diodes; zener models |
|
9/16 |
Sedra
section 3.7 |
Design
problem discussion; Diode p-n junction physics |
|
9/18 |
Sedra
section 3.7 |
Diode
p-n junction physics |
|
9/21 |
Sedra
section 3.7 |
Diode
p-n junction physics |
|
9/23 |
Sedra
section 3.8,3.9 |
p-n
physics wrap-up; Pspice simulation of diodes |
|
9/25 |
Sedra
section 4.1 |
FET
device structure and physical operation; i-v characteristics |
|
9/28 |
Sedra
section 4.2&4.3 |
FET
large signal model; p-channel; DC bias |
|
9/30 |
Sedra
section 4.3,4.5 |
FET
DC bias |
|
10/2 |
Sedra
section 4.4,4.6 |
FET
small signal model and FET amplifier circuits |
|
10/5 |
Sedra
section 4.6 |
FET
amplifier circuits |
|
10/7 |
Sedra
section 4.7 |
FET
CS and CD amplifier intro |
|
10/9 |
Sedra
section 4.7, 4.5 |
FET
CS and CD amplifier |
|
10/12 |
Sedra section 4.7 |
FET CG amplifier |
|
10/14 |
Midterm
1 |
|
|
10/16 |
Sedra
section 4.5.4 and 6.3, 6.5 |
Active
biasing, active load CS amplifier |
|
10/19 |
Sedra
section 4.8,1.6 |
MOSFET
capacitances and high frequency model |
|
10/21 |
Sedra
section 1.6, 4.9 |
Frequency
response review (Bode), Amplifier frequency response |
|
10/23 |
Sedra
section 4.10 |
CMOS
logic concepts - inverter |
|
10/26 |
Sedra
section 4.10 |
CMOS
inverter wrapup - inverter design problem |
|
10/28 |
Sedra
section 4.11,4.12 |
Inverter
propagation delay, fan out limits; MOS switches |
|
10/30 |
MOS
SPICE models; Intro to Bipolar Junction Transistors |
|
|
11/2 |
Sedra
section 5.1 |
BJT
device physics |
|
11/4 |
Sedra
section 5.1,5.2,5.3 |
BJT
Large signal circuit models and terminal characteristics |
|
11/6 |
Sedra
section 5.2,5.5 |
PNP
devices; BJT DC analysis |
|
11/9 |
Sedra
section 5.4,5.5 |
BJT
DC analysis |
|
11/13 |
Sedra
section 5.3,5.6 |
small
signal amplifier |
|
11/16 |
Sedra
section 5.3,5.6 |
small
signal amplifier continued |
|
11/18 |
Sedra
section 5.6, 5.7 |
small
signal analysis of single stage amplifiers |
|
11/20 |
midterm
#2 |
Covers:
FETs (amplifiers, active bias/load, frequency response, CMOS inverter, MOS switch)
BJTs (terminal characteristics and large signal model, DC bias analysis) |
|
11/23 |
Sedra
5.8, 5.9 |
high
frequency model of BJT, freq. response |
|
11/30 |
Sedra
5.9 |
freq.
response |
|
12/2 |
Sedra
5.10 |
saturation,
cutoff and digital applications |
|
12/4 |
Sedra
2.1-2.8 |
op-amps
and practical design |
|
12/7 |
Sedra
2.1-2.8 |
op-amps
and practical design continued |
|
12/9 |
Sedra
14.1-14.4 |
power
output stages - class A, class AB, class B |
|
12/11 |
Sedra
14.1-14.4 |
power
output stages wrap-up, review |
|
|
||
|
|
|
|
set
# |
Due
Date |
Problems |
Solutions |
|
1 |
9/2 |
PRETEST |
|
|
2 |
9/9 |
||
|
3 |
9/11 |
3.9,
3.11 |
|
|
4 |
9/14 |
3.20,
3.26 |
|
|
5 |
9/16 |
3.49,
3.54, 3.83 |
|
|
6 |
9/18 |
zener regulator, 3.97 |
|
|
7 |
9/21 |
3.112,
3.115 |
|
|
8 |
10/5 |
|
|
|
9 |
9/25 |
4.4,
4.7 |
|
|
10 |
9/28 |
4.12,
4.15, 4.26 |
|
|
11 |
9/30 |
4.35,
4.37, 4.39 |
|
|
12 |
10/2 |
4.55,
4.65 |
|
|
13 |
10/7 |
4.68,
4.69, 4.74 |
|
|
14 |
10/12 |
4.81,
4.82, 4.85 |
|
|
15 |
10/19 |
||
|
16 |
10/21 |
4.91,
4.92 |
|
|
17 |
10/23 |
4.95,
4.99 |
|
|
18 |
10/28 |
4.105,
4.111, 4.112 |
|
|
19 |
10/30 |
4.116,
4.118 |
|
|
20 |
11/2 |
5.3,
5.7, 5.12 |
|
|
21 |
11/4 |
|
|
|
22 |
11/6 |
5.16,
5.20, 5.21 |
|
|
23 |
11/9 |
5.30,
5.38, 5.46 |
|
|
24 |
11/13 |
5.55,
5.62, 5.70 |
|
|
25 |
11/16 |
5.74,
5.85, 5.90 |
|
|
26 |
11/18 |
5.108,
5.112, 5.115 |
|
|
27 |
11/23 |
5.130,
5.137, 5.144 |
|
|
28 |
11/30 |
5.153,
5.157, 5.160, 5.163 |
|
|
29 |
12/2 |
5.168,
5.170 |
|
|
30 |
12/4 | ||
|
31 |
12/7 |
lpfilt, blopamppg1 blopamppg2; dcoff; logamp1
logamp2 zenerrefpg1 zenerrefpg2 currentsinkpg1 currentsinkpg2 |
(* asterisk indicates design problem)
opamps: LM741(National)
LM741(Fairchild) OP27 OP37 AD8045
diodes: 1N4148 1N4001/2/3/4 1N4733 (5.1V Zener)
transistors: 2N7000 (n channel MOSFET)
2N4124 (npn transistor similar to 2N3904) 2N4126 (npn transistor similar to 2N3906) BD249 (NPN Power Transistor)
CD4007 (CMOS transistor array, TI datasheet; the Fairchild datasheet is here )
2N4124 (npn transistor similar to 2N3904) 2N4126 (npn transistor similar to 2N3906)
(* asterisk indicates lab activity in which students are building circuits of
their own design)
This page is maintained by David Dickensheets.